| PART |
Description |
Maker |
| HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation.
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EN27LN2G08 |
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| W29GL256PL9B W29GL256PL9T-TR W29GL256PH9T W29GL256 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64
256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64
1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64
128M X 1 FLASH 3V PROM, 100 ns, PBGA64
1G X 1 FLASH 3V PROM, 120 ns, PDSO56
1G X 1 FLASH 3V PROM, 130 ns, PDSO56
1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
N.A.
Unisonic Technologies
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP
8Mbit Flash Memory
8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY
8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|
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